Specialized Elective

Physics and Technology of Semiconductor Devices

CODE
ΣΥΕ206
SEMESTER
7
HOURS per WEEK
3
ECTS CREDITS
4  (Erasmus+ course)
INSTRUCTOR

Dimitrios Tassis

• Semiconductors under thermodynamic equilibrium conditions:
Introduction, Energy bands in solids, doping in semiconductors, electrons and holes in semiconductors, electrical neutrality of space charge, mobility of electrons-holes, semiconductor conductivity.
• Semiconductors under non-equilibrium conditions:
Introduction, lifetime of carriers in excess, diffusion of carriers in semiconductors, continuity equation, applications of continuity equation.
• Diode of p-n junction:
Introduction, basic technology of semiconductor devices, correlation between energy band structure and electrostatic parameters, space charge region of abrupt p-n junction (thermal equilibrium, application of external bias), capacitance-voltage characteristics of p-n junction, current-voltage characteristics of p-n junction (forward bias, reverse bias), experimental I-V characteristics of p-n junction (tunneling, avalanche breakdown).
• Metal/semiconductor contacts:
Work-function of metals, Fermi level and Fermi-Dirac function in metals, work function and electron affinity of semiconductors, metal/semiconductor contact (Schottky diode) in thermal equilibrium, capacitance, I-V characteristics, ohmic contact.
• Bipolar transistor:
Principle of operation, current gain, input and output d.c. characteristics, common base and common emitter connection, applications.

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