Electronic properties of semiconductor materials and devices, optical properties & spectroscopy
Study of the nanostructure (nearest neighbor distances, coordination numbers and bond angles) as well as optical properties (density of unoccupied states) in the soft and hard x-ray spectral region using x-ray absorption spectroscopies EXAFS & NEXAFS.
Elemental mapping using the x-ray fluorescence spectroscopy (XRF mapping) and micro XAFS. The samples under study are:
i) compounds of Si (mainly SiNx)
ii) group III nitrides (GaN, AlN, InN and their alloys)
iii) glasses and glass ceramics containing solid wastes (information on the sample preparation can be found in the web page of WFENV-NET http://web.auth.gr/wfenv-net
iv) biological samples for the determination of the trace element concentration
Moreover, inelastic X-ray (and alternatively neutron) scattering for the study of dispersion curves and the density of states of crystalline solids can be conducted.
The measurements are conducted at Synchrotron Radiation facilities: