Dr. Bela Pecz
Director of the Institute of Technical Physics and Materials Science (MFA),
Energy Research Center of the Hungarian Academy of Sciences,
Budapest
Director of the Institute of Technical Physics and Materials Science (MFA),
Energy Research Center of the Hungarian Academy of Sciences,
Budapest
ώρα 13.15, αίθουσα συνεδριάσεων Τμήματος Φυσικής (4ος
όροφος).
Abstract
The talk gives an overview of development of wide bandgap semiconductors via the growth of heteroepitaxial layers and their investigation by transmission electron microscopy. The feedback of microscopy helped crystal growers to decrease the dislocation density in nitride layers. Example of epitaxial lateral overgrowth is discussed. Optoelectronic devices request homogeneous layers and sharp interfaces. Beside the optoelectronic devices high power GaN based transistors were also prepared and their self-heating became a major issue. The talk reviews couple of possible solution of that problem with the combination of materials with high thermal conductivity like diamond, or graphene. First results achieved by our new Cs corrected TEM will be shown via examples of crystallized silicon, Ga2O3 and 2D nitride semiconductors layers.
